thin drift region

基本解释

Principle and method for designing high voltage thin film SOI devices with linearly doped drift region are given.
给出了漂移区为线性掺杂的高压薄膜SOI器件的设计原理和方法。
For thin-film SOI-HVIC, linear drift region doping profile is adopted to satisfy a certain breakdown-voltage, but this process is too complex and its self-heating effect is obvious;
为了满足一定的击穿电压，薄膜SOI高压电路一般采用漂移区线性掺杂技术，但其工艺复杂，且自热效应严重；
The dependence of breakdown voltages of the thin film SOI devices on the concentration gradient in the linearly doped drift region is experimentally investigated for the first time.
首次对薄膜SOI功率器件的击穿电压与线性掺杂漂移区的杂质浓度梯度的关系进行了实验研究。