memory write operation

基本解释

The circuit can also write information into the memory cell by selective write operation.
该电路也可以经过选择性写入操作把信息写入存储单元。
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The only Write operation permitted on a flash memory device is to change a bit from a one to a zero.
flash 内存设备中惟一允许的 Write 操作是将 1 修改为 0。
When the cell ratio is given, the disturb induced by the parasitical RC can be effectively reduced, the read-write speed of the memory and operation reliability are improved by this method.
在存储器单元比值一定的条件下，采用这种结构可以显著减小由寄生RC所带来的单元间的串扰，提高存储器读写的速度和工作可靠性。