low implantation

基本解释

Comparing with high-energy ion implantation, low energy ion implantation brings more problems.
低能离子注入与高能离子注入相比面临着更多的问题。
Densities of threading dislocation in the layer of top silicon of SIMOX wafer can be reduced by using oxygen ion implantation of low dose.
低剂量氧离子注入能降低SIMOX硅片顶层硅中的间隙原子浓度，从而降低穿透位错的密度。
However, the effect of low energy ion implantation on the length of bough, the side-bough, the divarication and the size of peanut were very weak.
而花生主枝长，侧枝长，分枝数和荚果大小等性状除个别剂量外影响较小，变化规律性较弱。