dielectric breakdown model

常见例句

A physical model of dielectric breakdown was presented in IC silicon dioxide films.
提出了芯片门电路硅氧化层静电放电介质击穿的物理模型。
The breakdown and quench model has been proposed theoretically considering the wall charges accumulated on the dielectric layers.
考虑到电介质表面积累的壁电荷的作用，理论上提出了击穿—熄火方程。
On the basis of the physical model of ESD dielectric oxide breakdown of IC devices, this paper discusses the mechanism of ESD oxide breakdown when a first order voltage is applied across and oxide.
在集成电路绝缘氧化层ESD介质击穿物理模型的基础上，讨论了绝缘氧化层加上一次线性电场条件下发生介质击穿的机理。