buried channel

基本解释

The device utilizes three phase construction with the technology of buried channel and three layer polysilicon.
该器件为三相结构，采用埋沟和三层多晶硅技术。
The 2048-element CCPD to be butted uses three-phase three-level polysilicon overlapping gate buried channel structure.
用于拼接的2048位CCPD是采用埋沟三相三层多晶硅交迭栅埋沟结构。
The project requires the construction to be carried out in various ground conditions ranging from deep buried channel of Kallang formation to Old Alluvium formation.
本工程地层为从深埋的加冷河构造通道到旧的冲积层构造，施工地层条件变化多端。