IMPATT

基本解释

• n.碰撞雪崩渡越时间二极管

同根派生

• IMPATT相关词

英汉例句

• The peak power output of pulsed IMPATT source of 3.2W at 1% duty cycle is achieved at 30.52GHz, frequency chirp during the bias pulse is less than 800MHz.
  振荡源在30.;52GHz的频率上;脉冲峰值功率为3
• The corresponding curves are given here. With these results in mind, 3-mm band P+NN+ IMPATT and 8-mm band P+PNN+ DDR avalanche devices have been designed and developed resulting in excellent performence.
  已利用这些结果设计和研制成3mm P~+NN~+崩越二极管和8mmP~+PNN~+双漂移崩越二极管;获得了良好性能.
• Analysis of Transit Angle of DDR IMPATT Diode
  双漂移崩越二极管的渡越角分析
• Thermal Resistance Measurement of IMPATT Diodes
  IMPATT二极管热阻测试
• J-BAND SILICON DDR IMPATT DEVICE
  J波段硅DDR IMPATT器件

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