High-k

基本解释

High k dielectric HfO 2 films were deposited on p type Si(100) substrates by e beam evaporation.
使用高真空电子束蒸发在p型Si(1 0 0 )衬底上制备了高kHfO2 薄膜 .
The equivalent oxide thickness (EOT) of an HfO_2 high k dielectric is extracted in two steps.
分两步提取了HfO2高k栅介质等效氧化层厚度(EOT).
A high K ratio method for fatigue precracking in welding position toughness specimen of thick steel plate was developed.
提出了预制厚钢板焊缝断裂韧度试样疲劳裂纹的“高K比法”。
Intel's new design uses what is known as high K metal gate technology. But IBM made a similar announcement on the same day as Intel.
英特尔的新设计使用的是大家所知道的“高K金属门”技术。但是，IBM公司也在同一天作了类似的宣布。
NTBI induced device degradation can be suppressed by a SiN capping layer between Poly-Si gate and high k dielectric layer.
在闸极与高介电常数介电层间使用氮化矽可有效抑制负偏压温度不稳定性的现象。